BSC027N04LSG

厂牌:Infineon(英飞凌)
包装:--
类目:元器件 > 分立器件 > MOSFET
编号:B000051379350
描述:MOSFET N-CH 40V 100A TDSON-8
最新价格近期成交10单+
数量价格(含税)
1¥3.3111
100¥2.7666
1250¥2.5666
2500¥2.4333
5000¥2.3333
库存:13交期:3-5Days起订:1增量:1
数量:
X
3.3111(单价)
合计:
¥3.31
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min70 S
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current100 A
ImageInfineon Technologies BSC027N04LS G
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
DescriptionMOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
Height1.27 mm
Length5.9 mm
Typical Turn-On Delay Time9.8 ns
Rds On - Drain-Source Resistance2.3 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time39 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Package / CaseTDSON-8
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity5000
Width5.15 mm
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandInfineon Technologies
ManufacturerInfineon
SeriesBSC027N
MXHTS85412999
TARIC8541290000
RoHS Details
Qg - Gate Charge85 nC
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time6.2 ns
Unit Weight0.003527 oz
CNHTS8541290000
Part # AliasesBSC27N4LSGXT SP000354810 BSC027N04LSGATMA1
Pd - Power Dissipation83 W
TradenameOptiMOS 5
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time5.6 ns