参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time2.9 ns
Rds On - Drain-Source Resistance33 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14.6 ns
MXHTS85423999
Qg - Gate Charge17 nC
KRHTS8541299000
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
ProductMOSFET Small Signal
Fall Time3.1 ns
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.002610 oz
TARIC8542399000
RoHS Details
Pd - Power Dissipation1.42 W
ImageDiodes Incorporated DMG4466SSS-13
BrandDiodes Incorporated
Factory Pack Quantity2500
Product CategoryMOSFET
Product TypeMOSFET
Vds - Drain-Source Breakdown Voltage30 V
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Number of Channels1 Channel
Rise Time7.9 ns
USHTS8542390001
DescriptionMOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD