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DMN1019USN-7
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051379386
描述：Trans MOSFET N-CH 12V 9.3A Automotive 3-Pin SC-59 T/R
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage350 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current9.3 A
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time7.6 nS
MXHTS85412101
CNHTS8541290000
Rds On - Drain-Source Resistance10 mOhms
KRHTS8541219000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time22.2 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
Package / CaseSC59-3
PackagingMouseReel
PackagingCut Tape
PackagingReel
Qg - Gate Charge27.3 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMN1019USN-7
Factory Pack Quantity3000
SeriesDMN1019
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 12V N-Ch Enh FET 2426pF 27.3nC
Channel ModeEnhancement
Fall Time16.8 ns
USHTS8541210095
Unit Weight0.000282 oz
Pd - Power Dissipation1.2 W
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel
Rise Time57.6 ns