参数项参数值
参数项参数值
Forward Transconductance - Min1 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage850 mV
TechnologySi
Id - Continuous Drain Current240 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
CNHTS8541210000
Typical Turn-On Delay Time2.9 ns
MXHTS85412101
Rds On - Drain-Source Resistance3.8 Ohms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time6.6 ns
KRHTS8541299000
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
Qg - Gate Charge360 pC
BrandDiodes Incorporated
TARIC8541210000
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMG6301UDW-7
RoHS Details
Product CategoryMOSFET
SeriesDMG6301
DescriptionMOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time2.3 ns
USHTS8541290095
Unit Weight0.000212 oz
Pd - Power Dissipation370 mW
Vds - Drain-Source Breakdown Voltage25 V
Number of Channels2 Channel
Rise Time1.8 ns