参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current1.33 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time4.06 ns
Rds On - Drain-Source Resistance480 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time13.74 ns
MXHTS85412101
Qg - Gate Charge0.5 nC
KRHTS8541219000
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CAHTS8541210000
Minimum Operating Temperature- 55 C
Fall Time10.54 ns
CNHTS8541210000
ProductMOSFET Small Signal
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541210000
Unit Weight0.000106 oz
RoHS Details
SeriesDMN2400
Pd - Power Dissipation530 mW
BrandDiodes Incorporated
ImageDiodes Incorporated DMN2400UV-7
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage20 V
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Number of Channels2 Channel
Rise Time7.28 ns
USHTS8541210095