参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage350 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current6.1 A
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time53 ns, 53 ns
Rds On - Drain-Source Resistance17 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time562 ns, 562 ns
Minimum Operating Temperature- 55 C
Package / CaseU-DFN3030-8
ProductMOSFET Small Signal
Mounting StyleSMD/SMT
PackagingMouseReel
PackagingCut Tape
PackagingReel
Qg - Gate Charge8.8 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMG8601UFG-7
Factory Pack Quantity3000
SeriesDMG8601
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET LDO POSITIVE REG 2.7V/1A
Channel ModeEnhancement
Fall Time234 ns, 234 ns
Unit Weight0.000423 oz
Pd - Power Dissipation920 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time78 ns, 78 ns