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DMP3085LSS-13
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051379467
描述：场效应管(MOSFET) 1.3W 30V 3.8A 1个P沟道
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min5.8 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current3.8 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Typical Turn-On Delay Time4.8 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541290100
RoHS Details
CAHTS8541290000
Rds On - Drain-Source Resistance70 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time14.6 ns
Package / CaseSO-8
Factory Pack Quantity2500
BrandDiodes Incorporated
TARIC8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingMouseReel
PackagingCut Tape
PackagingReel
ImageDiodes Incorporated DMP3085LSS-13
SubcategoryMOSFETs
Qg - Gate Charge11 nC
Product CategoryMOSFET
DescriptionMOSFET P-Ch ENH FET -30V 70mOhm -10V -3.8A
Product TypeMOSFET
MXHTS85412999
SeriesDMP3085
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.002610 oz
Fall Time14.6 ns
CNHTS8541290000
Pd - Power Dissipation1.6 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time5 ns