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DMN3016LSS-13
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051379483
描述：场效应管(MOSFET) 1.5W 30V 10.3A 1个N沟道
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.3 V
TechnologySi
Id - Continuous Drain Current10.3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time4.8 ns
Rds On - Drain-Source Resistance8 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26.1 ns
MXHTS85412999
Qg - Gate Charge25.1 nC
KRHTS8541299000
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
Fall Time5.6 ns
CNHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541290000
RoHS Details
Unit Weight0.002610 oz
Pd - Power Dissipation1.5 W
ImageDiodes Incorporated DMN3016LSS-13
SeriesDMN3016
BrandDiodes Incorporated
Factory Pack Quantity2500
Product TypeMOSFET
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage30 V
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Number of Channels1 Channel
Rise Time16.5 ns
USHTS8541290095
DescriptionMOSFET 30V N-Ch Enh FET 20Vdss 1.5W