DMN1019USN-13

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000051379496

描述：Trans MOSFET N-CH 12V 9.3A Automotive 3-Pin SC-59 T/R

商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage530 mV

TechnologySi

Id - Continuous Drain Current9.3 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 8 V, + 8 V

Typical Turn-On Delay Time7.6 nS

Rds On - Drain-Source Resistance41 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time22.2 ns

Mounting StyleSMD/SMT

Qg - Gate Charge50.6 nC

Package / CaseSC-59-3

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

ImageDiodes Incorporated DMN1019USN-13

PackagingMouseReel

PackagingReel

PackagingCut Tape

RoHS Details

Channel ModeEnhancement

Factory Pack Quantity10000

Fall Time16.8 ns

SeriesDMN10

SubcategoryMOSFETs

Product CategoryMOSFET

BrandDiodes Incorporated

Unit Weight0.000282 oz

DescriptionMOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W

ManufacturerDiodes Incorporated

Product TypeMOSFET

Pd - Power Dissipation1.2 W

Vds - Drain-Source Breakdown Voltage12 V

Number of Channels1 Channel

Rise Time57.6 ns