参数项参数值
参数项参数值
Forward Transconductance - Min200 ms
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage490 mV
TechnologySi
Id - Continuous Drain Current300 mA
Transistor PolarityN-Channel
MXHTS85412101
Vgs - Gate-Source Voltage- 20 V, + 20 V
Length2.9 mm
Width1.3 mm
Height1 mm
KRHTS8541219000
Rds On - Drain-Source Resistance2 Ohms
Transistor Type1 N-Channel
Minimum Operating Temperature- 65 C
JPHTS8541210101
Package / CaseSOT-23-3
CAHTS8541210000
ProductMOSFET Small Signal
CNHTS8541210000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Factory Pack Quantity3000
ImageDiodes Incorporated DMN5L06K-7
PackagingCut Tape
PackagingMouseReel
PackagingReel
Product TypeMOSFET
BrandDiodes Incorporated
DescriptionMOSFET N-Channel
TARIC8541210000
Product CategoryMOSFET
RoHS Details
SeriesDMN5L06
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Channel ModeEnhancement
Unit Weight0.000282 oz
USHTS8541210095
Pd - Power Dissipation350 mW
Vds - Drain-Source Breakdown Voltage50 V
Number of Channels1 Channel