参数项参数值
参数项参数值
Gate-Emitter Leakage Current600 nA
Collector- Emitter Voltage VCEO Max1200 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
Collector-Emitter Saturation Voltage2.05 V
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
Package / CaseTO-247-3
Mounting StyleThrough Hole
CAHTS8541290000
Minimum Operating Temperature- 40 C
PackagingTube
Maximum Operating Temperature+ 175 C
Factory Pack Quantity240
CNHTS8541210000
DescriptionIGBT Transistors IGBT PRODUCTS
ImageInfineon Technologies IKW25N120H3
BrandInfineon Technologies
SeriesHighSpeed 3
Product TypeIGBT Transistors
TARIC8541290000
ManufacturerInfineon
Product CategoryIGBT Transistors
RoHS Details
Unit Weight1.340411 oz
SubcategoryIGBTs
Continuous Collector Current at 25 C50 A
Part # AliasesSP000674418 IKW25N12H3XK IKW25N120H3FKSA1
Pd - Power Dissipation326 W
USHTS8541290095
TradenameTRENCHSTOP