参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current700 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width3.9 mm
Rds On - Drain-Source Resistance2.4 Ohms
Transistor Type1 P-Channel
Height1.75 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge6 nC
Mounting StyleSMD/SMT
Package / CaseSO-8
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity4000
CNHTS8541290000
BrandInfineon / IR
ManufacturerInfineon
TARIC8541290000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET MOSFT PCh -150V -0.7A 2400mOhm 6nC
ImageInfineon / IR IRF6217TRPBF
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.019048 oz
USHTS8541290095
Pd - Power Dissipation2.5 W
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel