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DMN62D0LFB-7
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051379635
描述：Trans MOSFET N-CH 60V 0.32A 3-Pin X1-DFN T/R
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage600 mV
TechnologySi
Id - Continuous Drain Current320 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
KRHTS8541219000
Typical Turn-On Delay Time3.4 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541210101
RoHS Details
CAHTS8541210000
Rds On - Drain-Source Resistance2 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26.4 ns
Package / CaseX1-DFN1006-3
Factory Pack Quantity3000
BrandDiodes Incorporated
TARIC8541210000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated DMN62D0LFB-7
SubcategoryMOSFETs
Qg - Gate Charge0.45 nC
Product CategoryMOSFET
DescriptionMOSFET MOSFET BVDSS: 41V-60 X2-DFN1006-3 T&R 3K
Product TypeMOSFET
MXHTS85412101
SeriesDMN62
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.105822 oz
Fall Time16.3 ns
CNHTS8541210000
Pd - Power Dissipation0.5 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time3.4 ns