参数项参数值
参数项参数值
DC Current Gain hFE Max600
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.1 A
ConfigurationDual
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO5 V
Length2.2 mm
Width1.35 mm
Height1 mm
DC Collector/Base Gain hfe Min100
Minimum Operating Temperature- 55 C
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageDiodes Incorporated DCX114EU-7-F
BrandDiodes Incorporated
Product CategoryBipolar Transistors - Pre-Biased
RoHS Details
DescriptionBipolar Transistors - Pre-Biased COMP NPN/PNP 200mW
SeriesDCX114
Product TypeBJTs - Bipolar Transistors - Pre-Biased
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.000212 oz
Pd - Power Dissipation200 mW
Typical Resistor Ratio1
Typical Input Resistor10 kOhms
Number of Channels2 Channel
TypeComplementary NPN/PNP Pre-Biased Small Signal SOT-363 Dual Transistor