参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current8.58 A
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time10.39 ns
MXHTS85423999
CNHTS8541210000
KRHTS8541219000
Transistor Type2 N-Channel
Typical Turn-Off Delay Time59.38 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Package / CaseTSSOP-8
ProductMOSFET Small Signal
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
Qg - Gate Charge16.5 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8542399000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMN2016UTS-13
Factory Pack Quantity2500
SeriesDMN2016
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS
Channel ModeEnhancement
Fall Time16.27 ns
USHTS8542390001
Unit Weight0.005573 oz
Pd - Power Dissipation880 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time11.66 ns