参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage650 mV, 500 mV
TechnologySi
Id - Continuous Drain Current400 mA, 2.6 A
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V, - 12 V, + 12 V
Typical Turn-On Delay Time3 ns, 3.5 ns
Rds On - Drain-Source Resistance4 Ohms, 300 mOhms
Typical Turn-Off Delay Time7.7 ns, 61.4 ns
MXHTS85412999
Qg - Gate Charge700 pC, 21 nC
KRHTS8541299000
Package / CaseTSOT-26-6
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CAHTS8541290000
Minimum Operating Temperature- 55 C
Fall Time3.7 ns, 14.6 ns
CNHTS8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
Unit Weight1.375685 oz
RoHS Details
SeriesDMC25
Pd - Power Dissipation1.2 W
BrandDiodes Incorporated
ImageDiodes Incorporated DMC25D0UVT-7
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage25 V, 30 V
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Number of Channels2 Channel
USHTS8541290095
Rise Time2.3 ns, 3.3 ns
DescriptionMOSFET 20V Enh Mode FET