参数项参数值
参数项参数值
Forward Transconductance - Min27 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current50 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time17 ns
Width5.31 mm
Rds On - Drain-Source Resistance40 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time55 ns
Length15.87 mm
Height20.7 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge156 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
PackagingTube
CNHTS8541290000
BrandInfineon / IR
Factory Pack Quantity400
Channel ModeEnhancement
TARIC8541290000
ManufacturerInfineon
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET MOSFT 200V 49A 40mOhm 156nCAC
Fall Time48 ns
ImageInfineon / IR IRFP260MPBF
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight1.340411 oz
USHTS8541290095
Pd - Power Dissipation300 W
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel