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DMG4800LSD-13
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051379711
描述：MOSFET 2N-CH 30V 8.54A SO8
商品参数
参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage800 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current7.5 A
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time5.03 ns
MXHTS85412999
CNHTS8541290000
Rds On - Drain-Source Resistance16 mOhms
KRHTS8541299000
Transistor Type2 N-Channel
Typical Turn-Off Delay Time26.33 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
ProductMOSFET Small Signal
Package / CaseSO-8
PackagingMouseReel
PackagingCut Tape
PackagingReel
Qg - Gate Charge8.56 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMG4800LSD-13
Factory Pack Quantity2500
SeriesDMG4800
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET Dual N-Ch 30V VDSS 25 Vgss 42A IDM
Channel ModeEnhancement
Fall Time8.55 ns
USHTS8541290095
Unit Weight0.002610 oz
Pd - Power Dissipation1.17 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time4.5 ns