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DMN1019UFDE-7
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051379738
描述：场效应管(MOSFET) 690mW 12V 11A 1个N沟道
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min28 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage800 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current11 A
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time7.6 nS
MXHTS85412101
CNHTS8541210000
KRHTS8541219000
Rds On - Drain-Source Resistance10 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time57.6 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Package / CaseDFN-2020-6
Mounting StyleSMD/SMT
PackagingMouseReel
PackagingCut Tape
PackagingReel
Qg - Gate Charge27.3 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMN1019UFDE-7
Factory Pack Quantity3000
SeriesDMN10
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
Channel ModeEnhancement
Fall Time16.8 ns
USHTS8541210095
Unit Weight0.846575 oz
Pd - Power Dissipation690 mW
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel
Rise Time22.2 ns