参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current4.2 A
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time8.1 ns
MXHTS85412101
CNHTS8541210000
Rds On - Drain-Source Resistance25 MOhms
KRHTS8541219000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40.1 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
ProductMOSFET Small Signal
Package / CaseSOT-23-3
PackagingMouseReel
PackagingReel
PackagingCut Tape
Qg - Gate Charge9.6 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMG3414U-7
Factory Pack Quantity3000
SeriesDMG3414
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET N-Ch 20V VDSS 8 Vgss 30A IDM
Channel ModeEnhancement
Fall Time9.6 ns
USHTS8541210095
Unit Weight0.000282 oz
Pd - Power Dissipation780 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time8.3 ns