参数项参数值
参数项参数值
DC Current Gain hFE Max500
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO45 V
Maximum DC Collector Current6 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current3 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage500 mV
Width3.7 mm
Height1.65 mm
Length6.7 mm
DC Collector/Base Gain hfe Min50 at 3 A, 2 V
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Factory Pack Quantity1000
CNHTS8541290000
BrandDiodes Incorporated
DescriptionBipolar Transistors - BJT NPN High Gain & Crnt
ImageDiodes Incorporated FZT690BTA
Product TypeBJTs - Bipolar Transistors
SeriesFZT690
ManufacturerDiodes Incorporated
TARIC8541290000
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.003951 oz
SubcategoryTransistors
USHTS8541290075