参数项参数值
参数项参数值
DC Current Gain hFE Max270
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO150 V
Maximum DC Collector Current4.5 A
Collector- Emitter Voltage VCEO Max75 V
Continuous Collector Current4.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width3.7 mm
Collector-Emitter Saturation Voltage440 mV
Height1.65 mm
DC Collector/Base Gain hfe Min40 at 4.5 A, 2 V
Length6.7 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
Factory Pack Quantity1000
BrandDiodes Incorporated
SeriesFZT105
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN High Gain & Crnt
ManufacturerDiodes Incorporated
TARIC8541290000
ImageDiodes Incorporated FZT1053ATA
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.003951 oz
SubcategoryTransistors
Pd - Power Dissipation2.5 W
USHTS8541290095