参数项参数值
参数项参数值
Forward Transconductance - Min27 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance13 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
Width3.9 mm
Height1.75 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge29 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time3.2 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRF7470TRPBF
TARIC8541290000
RoHS Details
Unit Weight0.019048 oz
Factory Pack Quantity4000
Product TypeMOSFET
Pd - Power Dissipation2.5 W
BrandInfineon / IR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT 40V 11A 13mOhm 29nC
Vds - Drain-Source Breakdown Voltage40 V
USHTS8541290095
Number of Channels1 Channel
Rise Time1.9 ns
Moisture Sensitivity Level1 (Unlimited)