在线商城 
DMT10H015LSS-13
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051379944
描述：Trans MOSFET N-CH 100V 8.3A Automotive 8-Pin SO T/R
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current8.3 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
Width3.95 mm
Typical Turn-On Delay Time6.5 ns
Length4.95 mm
Height1.5 mm
KRHTS8541299000
CNHTS8541290000
Rds On - Drain-Source Resistance16 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19.7 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseSO-8
Mounting StyleSMD/SMT
Qg - Gate Charge33.3 nC
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
BrandDiodes Incorporated
Product CategoryMOSFET
Factory Pack Quantity2500
ImageDiodes Incorporated DMT10H015LSS-13
TARIC8541290000
Product TypeMOSFET
SeriesDMT10
ManufacturerDiodes Incorporated
DescriptionMOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time8.1 ns
Unit Weight0.002610 oz
USHTS8541290095
Pd - Power Dissipation1.2 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time7 ns