在线商城 
商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max360
Gain Bandwidth Product fT65 MHz
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage0.3 V
MXHTS85412999
KRHTS8541299000
Package / CaseDPAK-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 65 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
CNHTS8541290000
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
TARIC8541290000
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity2500
SeriesNJD2873
RoHS Details
DescriptionBipolar Transistors - BJT 2.0 A, 50 V DPAK NPN Bipolar Power Transistor
ImageON Semiconductor NJVNJD2873T4G
SubcategoryTransistors
Unit Weight0.070548 oz
USHTS8541290095
Pd - Power Dissipation15 W
Moisture Sensitivity Level1 (Unlimited)