参数项参数值
参数项参数值
DC Current Gain hFE Max30 at 50 mA, 10 V
Collector- Base Voltage VCBO300 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max300 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO3 V
DC Collector/Base Gain hfe Min30 at 50 mA, 10 V
Width6.2 mm
Height2.4 mm
Length6.8 mm
MXHTS85412101
KRHTS8541219000
Package / CaseDPAK-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Unit Weight0.009185 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation1560 mW
ImageDiodes Incorporated MJD340-13
SeriesMJD340
Factory Pack Quantity2500
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT HIGH VOLTAGE NPN SMT
USHTS8541210095