参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage600 mV
Width0.8 mm
Height0.75 mm
Length1.6 mm
DC Collector/Base Gain hfe Min200
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-523-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
BrandDiodes Incorporated
CNHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
SeriesBC847B
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
ImageDiodes Incorporated BC847BT-7-F
SubcategoryTransistors
DescriptionBipolar Transistors - BJT NPN BIPOLAR
Unit Weight0.000071 oz
USHTS8541210075
Pd - Power Dissipation150 mW
Moisture Sensitivity Level1 (Unlimited)