SI4599DY-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000051380253

描述：MOSFET N/P-CH 40V 8SOICMOSFET -40V Vds 20V Vgs SO-8 N&P PAIR

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商品参数

参数项参数值

Forward Transconductance - Min14 S, 22 S

ConfigurationDual

Vgs th - Gate-Source Threshold Voltage1.2 V, 1.4 V

TechnologySi

Transistor PolarityN-Channel, P-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time7 ns, 7 ns

Width3.9 mm

Rds On - Drain-Source Resistance35.5 mOhms, 45 mOhms

Transistor Type1 N-Channel, 1 P-Channel

Typical Turn-Off Delay Time15 ns, 30 ns

Height1.75 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge11.7 nC, 25 nC

Mounting StyleSMD/SMT

Package / CaseSO-8

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

PackagingReel

PackagingCut Tape

PackagingMouseReel

Factory Pack Quantity2500

CNHTS8541290000

BrandVishay Semiconductors

ManufacturerVishay

SeriesSI4

Channel ModeEnhancement

TARIC8541290000

Product CategoryMOSFET

RoHS Details

DescriptionMOSFET -40V Vds 20V Vgs SO-8 N&P PAIR

ImageVishay Semiconductors SI4599DY-T1-GE3

Fall Time9 ns, 9 ns

Product TypeMOSFET

SubcategoryMOSFETs

Unit Weight0.019048 oz

Part # AliasesSI4599DY-GE3

USHTS8541290095

Pd - Power Dissipation3 W, 3.1 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels2 Channel

Rise Time10 ns, 12 ns