SI2333DDS-T1-GE3

SI2333DDS-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000051380265

描述：Trans MOSFET P-CH 12V 5A 3-Pin SOT-23MOSFET -12V Vds 8V Vgs SOT-23MOSFET -12V Vds 8V Vgs SOT-23

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Forward Transconductance - Min18 S

TechnologySi

Vgs th - Gate-Source Threshold Voltage1 V

Transistor PolarityP-Channel

Id - Continuous Drain Current6 A

Vgs - Gate-Source Voltage- 8 V, + 8 V

KRHTS8541299000

Minimum Operating Temperature- 55 C

Length2.9 mm

Height1.45 mm

JPHTS8541290100

Typical Turn-On Delay Time26 ns

CAHTS8541290000

Rds On - Drain-Source Resistance23 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time45 ns

Package / CaseSOT-23-3

RoHS Details

ImageVishay Semiconductors SI2333DDS-T1-GE3

PackagingCut Tape

PackagingMouseReel

PackagingReel

Maximum Operating Temperature+ 150 C

Width1.6 mm

TARIC8541290000

BrandVishay Semiconductors

Mounting StyleSMD/SMT

SubcategoryMOSFETs

Product CategoryMOSFET

ManufacturerVishay

DescriptionMOSFET -12V Vds 8V Vgs SOT-23

Factory Pack Quantity3000

Qg - Gate Charge35 nC

MXHTS85412999

SeriesSI2

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.000282 oz

Fall Time20 ns

CNHTS8541290000

Pd - Power Dissipation1.7 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage12 V

Number of Channels1 Channel

Rise Time24 ns

Moisture Sensitivity Level1 (Unlimited)