参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current13.7 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 8 V, + 8 V
JPHTS8541290100
Height1.75 mm
CAHTS8541290000
Product CategoryMOSFET
Minimum Operating Temperature- 55 C
ImageVishay Semiconductors SI4465ADY-T1-E3
Rds On - Drain-Source Resistance16 mOhms
Maximum Operating Temperature+ 150 C
Package / CaseSO-8
PackagingReel
PackagingCut Tape
PackagingMouseReel
Width3.9 mm
DescriptionMOSFET 8.0V 13.7A 3.0W 9.0mohm @ 4.5V
Mounting StyleSMD/SMT
TARIC8541290000
Factory Pack Quantity2500
ManufacturerVishay
Product TypeMOSFET
BrandVishay Semiconductors
Qg - Gate Charge85 nC
MXHTS85412999
SubcategoryMOSFETs
RoHS Details
SeriesSI4
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.006596 oz
CNHTS8541210000
Part # AliasesSI4465ADY-E3
Pd - Power Dissipation3 W
TradenameTrenchFET
Number of Channels1 Channel