5-103669-2TEN20-2412WIRTEN30-2412WIMAX660ESA+TDS600U+
在线商城 购物车
SIR876ADP-T1-GE3

SIR876ADP-T1-GE3

厂牌：VISHAY(威世)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051380333
描述：MOSFET 100V Vds 20V Vgs PowerPAK SO-8
最新价格近期成交24单+
数量价格（含税）
1¥4.8000
100¥3.9889
750¥3.7000
1500¥3.5334
3000¥3.3889
库存：1交期：3-5Days起订：1增量：1
数量：
X
4.8000（单价）
合计：
￥4.80
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min54 S
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage1.5 V
Transistor PolarityN-Channel
Id - Continuous Drain Current40 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
ManufacturerVishay
Typical Turn-On Delay Time11 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
RoHS Details
CAHTS8541290000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time28 ns
Factory Pack Quantity3000
Package / CasePowerPAK-SO-8
BrandVishay Semiconductors
TARIC8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageVishay Semiconductors SIR876ADP-T1-GE3
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET 100V Vds 20V Vgs PowerPAK SO-8
MXHTS85412999
Product TypeMOSFET
SeriesSIR
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.017870 oz
Fall Time8 ns
CNHTS8541290000
Part # AliasesSIR876ADP-GE3
Pd - Power Dissipation62.5 W
TradenameTrenchFET, PowerPAK
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time8 ns
Moisture Sensitivity Level1 (Unlimited)