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SI2324DS-T1-GE3

SI2324DS-T1-GE3

厂牌：VISHAY(威世)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051380343
描述：场效应管(MOSFET) SI2324DS-T1-GE3 SOT-23
最新价格近期成交50单+
数量价格（含税）
1¥9.8778
100¥8.5889
750¥7.8110
1500¥7.5111
3000¥7.2556
库存：3交期：3-5Days起订：1增量：1
数量：
X
9.8778（单价）
合计：
￥9.88
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current2.3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width1.6 mm
Rds On - Drain-Source Resistance234 mOhms
Height1.45 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge10.4 nC
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity3000
CNHTS8541290000
BrandVishay Semiconductors
ManufacturerVishay
SeriesSI2
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
DescriptionMOSFET 100V Vds 20V Vgs SOT-23
ImageVishay Semiconductors SI2324DS-T1-GE3
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.000282 oz
USHTS8541290095
Pd - Power Dissipation2.5 W
TradenameTrenchFET
Number of Channels1 Channel