参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current250 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time9 ns
Width1.6 mm
Rds On - Drain-Source Resistance2 Ohms
Transistor Type1 P-Channel
Height0.85 mm
Typical Turn-Off Delay Time35 ns
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
JPHTS8541290100
CAHTS8541290000
CNHTS8541210000
ProductMOSFET Small Signal
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RTU002P02T106
PackagingCut Tape
PackagingMouseReel
PackagingReel
Channel ModeEnhancement
SubcategoryMOSFETs
BrandROHM Semiconductor
Fall Time6 ns
ManufacturerROHM Semiconductor
Unit Weight0.000176 oz
Product CategoryMOSFET
Factory Pack Quantity3000
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET P-CH 20V 200MA SOT-323
Part # AliasesRTU002P02
Pd - Power Dissipation200 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time6 ns
TypeMOSFET