参数项参数值
参数项参数值
Forward Transconductance - Min55 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Rds On - Drain-Source Resistance4.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time43 ns
Width5.15 mm
Height1.27 mm
Length5.9 mm
MXHTS85412999
Qg - Gate Charge61 nC
KRHTS8541299000
Package / CaseTDSON-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
Fall Time13 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.017870 oz
RoHS Details
SeriesOptiMOS 5
Pd - Power Dissipation139 W
BrandInfineon Technologies
Part # AliasesBSC030N08NS5 SP001077098
ImageInfineon Technologies BSC030N08NS5ATMA1
Product TypeMOSFET
SubcategoryMOSFETs
Factory Pack Quantity5000
Vds - Drain-Source Breakdown Voltage80 V
ManufacturerInfineon
Product CategoryMOSFET
Number of Channels1 Channel
USHTS8541290095
Rise Time12 ns
TradenameOptiMOS
DescriptionMOSFET N-Ch 80V 100A
Moisture Sensitivity Level1 (Unlimited)