参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Width2.6 mm
Transistor PolarityN-Channel
Id - Continuous Drain Current360 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height1.6 mm
Length4.6 mm
Rds On - Drain-Source Resistance6 Ohms
Transistor Type1 N-Channel
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
ProductMOSFET Small Signal
Package / CaseSOT-89-3
PackagingReel
PackagingMouseReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
BrandMicrochip Technology
ManufacturerMicrochip
RoHS Details
SubcategoryMOSFETs
ImageMicrochip Technology DN3525N8-G
Factory Pack Quantity2000
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 250V 6Ohm
Channel ModeDepletion
Fall Time40 ns
Unit Weight0.004233 oz
Pd - Power Dissipation1.6 W
Vds - Drain-Source Breakdown Voltage250 V
Number of Channels1 Channel
Rise Time25 ns
TypeFET
Moisture Sensitivity Level1 (Unlimited)