参数项参数值
参数项参数值
Forward Transconductance - Min181 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.1 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Width5 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
CNHTS8541290000
Typical Turn-On Delay Time6 ns
Height1 mm
MXHTS85412999
Length6 mm
Rds On - Drain-Source Resistance1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
Package / CaseVSON-CLIP-8
KRHTS8541299000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
TARIC8541290000
ManufacturerTexas Instruments
RoHS Details
BrandTexas Instruments
ImageTexas Instruments CSD17573Q5B
Factory Pack Quantity2500
Product CategoryMOSFET
SubcategoryMOSFETs
SeriesCSD17573Q5B
Product TypeMOSFET
DescriptionMOSFET 30V, N-channel NexFET Pwr MOSFET
Channel ModeEnhancement
USHTS8541290095
Fall Time7 ns
Unit Weight0.003235 oz
Pd - Power Dissipation195 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time20 ns