参数项参数值
参数项参数值
Forward Transconductance - Min4.4 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current1.1 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6 ns
Width1.6 mm
Rds On - Drain-Source Resistance725 mOhms
Transistor Type1 N-Channel
Height1.1 mm
Typical Turn-Off Delay Time17 ns
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSSOT-6
Qg - Gate Charge11 nC
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ProductMOSFET Small Signal
TARIC8541290000
RoHS Details
ImageON Semiconductor / Fairchild FDC2612
PackagingCut Tape
PackagingMouseReel
PackagingReel
Channel ModeEnhancement
SubcategoryMOSFETs
BrandON Semiconductor / Fairchild
Fall Time6 ns
ManufacturerON Semiconductor
SeriesFDC2612
Unit Weight0.001058 oz
Factory Pack Quantity3000
Product CategoryMOSFET
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET 200V NCh PowerTrench
Part # AliasesFDC2612_NL
Pd - Power Dissipation1.6 W
TradenamePowerTrench
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time6 ns
TypeMOSFET