CSD17552Q5A

CSD17552Q5A

厂牌：TI(德州仪器)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000051569087

描述：场效应管(MOSFET) 3W 30V 60A；17A 1个N沟道 VSONP-8(5x6)

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min77 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.5 V

TechnologySi

Id - Continuous Drain Current60 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time7.6 nS

MXHTS85423901

Height1 mm

Rds On - Drain-Source Resistance7.5 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time12.2 ns

Length6 mm

KRHTS8541299000

Mounting StyleSMD/SMT

JPHTS8541290100

CAHTS8541290000

CNHTS8541290000

Package / CaseVSONP-8

Minimum Operating Temperature- 55 C

Qg - Gate Charge9 nC

Maximum Operating Temperature+ 150 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8542399000

BrandTexas Instruments

RoHS Details

ImageTexas Instruments CSD17552Q5A

Factory Pack Quantity2500

ManufacturerTexas Instruments

SeriesCSD17552Q5A

Product CategoryMOSFET

Product TypeMOSFET

SubcategoryMOSFETs

DescriptionMOSFET 30-V N-Ch NexFET Pwr MOSFET

Fall Time3.6 ns

Unit Weight0.002974 oz

USHTS8541290095

Pd - Power Dissipation3 W

TradenameNexFET

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time11.4 ns