SUM55P06-19L-E3

SUM55P06-19L-E3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000051728881

描述：MOSFET P-CH 60V 55A D2PAK

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min20 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Transistor PolarityP-Channel

Id - Continuous Drain Current55 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541299000

Length10.67 mm

Height4.83 mm

Typical Turn-On Delay Time12 ns

JPHTS8541290100

Minimum Operating Temperature- 55 C

CAHTS8541290000

Rds On - Drain-Source Resistance19 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time80 ns

RoHS Details

Package / CaseTO-263-3

Factory Pack Quantity800

ImageVishay / Siliconix SUM55P06-19L-E3

BrandVishay / Siliconix

Width9.65 mm

TARIC8541290000

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 175 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

ManufacturerVishay

SubcategoryMOSFETs

Product CategoryMOSFET

DescriptionMOSFET 60V 55A 125W

Qg - Gate Charge76 nC

MXHTS85412999

Product TypeMOSFET

SeriesSUM

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.050717 oz

Fall Time230 ns

CNHTS8541290000

Pd - Power Dissipation125 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Rise Time15 ns

Moisture Sensitivity Level1 (Unlimited)