参数项参数值
参数项参数值
Forward Transconductance - Min2.3 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current9 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Rds On - Drain-Source Resistance500 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time37 ns
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge16.5 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time28 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
SeriesSuper Junction-MOS KN
RoHS Details
ImageROHM Semiconductor R6009KNJTL
Unit Weight0.077603 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity1000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation94 W
Part # AliasesR6009KNJ
USHTS8541290095
DescriptionMOSFET Nch 600V 9A Si MOSFET
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time33 ns