参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance2.4 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time12 ns
CNHTS8541210000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time95 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RHU002N06FRAT106
Unit Weight0.001649 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation200 mW
Part # AliasesRHU002N06FRA
USHTS8541290095
DescriptionMOSFET TRANS
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time5 ns