R6020KNJTL

厂牌：ROHM

包装：REEL 1000

类目：元器件 > 分立器件 > MOSFET

编号：B000051736618

描述：MOSFET N-CH 600V 20A 150DEG C 231W; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:231W; Transistor Case Style:TO-263S; No. of Pins:3Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

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商品参数

参数项参数值

Forward Transconductance - Min5 s

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3 V

TechnologySi

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time30 ns

Rds On - Drain-Source Resistance170 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time55 ns

MXHTS85412999

KRHTS8541299000

CNHTS8541290000

Qg - Gate Charge40 nC

Package / CaseTO-263-3

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 150 C

CAHTS8541290000

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

Fall Time10 ns

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

SeriesSuper Junction-MOS KN

BrandROHM Semiconductor

RoHS Details

ImageROHM Semiconductor R6020KNJTL

Product CategoryMOSFET

Unit Weight0.077603 oz

Factory Pack Quantity1000

SubcategoryMOSFETs

ManufacturerROHM Semiconductor

Product TypeMOSFET

Pd - Power Dissipation231 W

Part # AliasesR6020KNJ

USHTS8541290095

DescriptionMOSFET Nch 600V 20A Si MOSFET

Vds - Drain-Source Breakdown Voltage600 V

Number of Channels1 Channel

Rise Time30 ns

Moisture Sensitivity Level1 (Unlimited)