参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5 V
TechnologySi
Id - Continuous Drain Current4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time13 ns
Rds On - Drain-Source Resistance1.43 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time24 ns
Qg - Gate Charge10.5 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time33 ns
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6004JND3TL1
Product CategoryMOSFET
Factory Pack Quantity2500
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation60 W
USHTS8541290095
DescriptionMOSFET 600V Vdss; 4A Id 60W Pd; TO-252
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time11 ns
Moisture Sensitivity Level1 (Unlimited)