R6024ENJTL

厂牌：ROHM

包装：REEL 1000

类目：元器件 > 分立器件 > MOSFET

编号：B000051736958

描述：MOSFET N-CH 600V 24A TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:245W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Id - Continuous Drain Current24 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 30 V, + 30 V

Typical Turn-On Delay Time35 ns

Rds On - Drain-Source Resistance150 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time180 ns

MXHTS85412999

Qg - Gate Charge70 nC

KRHTS8541299000

Package / CaseTO-263-3

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 150 C

CAHTS8541290000

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

CNHTS8541290000

Fall Time50 ns

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

RoHS Details

Unit Weight0.077603 oz

SeriesSuper Junction-MOS EN

ImageROHM Semiconductor R6024ENJTL

BrandROHM Semiconductor

Pd - Power Dissipation245 W

Factory Pack Quantity1000

Product TypeMOSFET

Part # AliasesR6024ENJ

ManufacturerROHM Semiconductor

Product CategoryMOSFET

SubcategoryMOSFETs

DescriptionMOSFET 10V Drive Nch MOSFET

Vds - Drain-Source Breakdown Voltage600 V

USHTS8541290095

Number of Channels1 Channel

Rise Time50 ns