参数项参数值
参数项参数值
DC Current Gain hFE Max390 at 100 mA, 3 V
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Collector-Emitter Saturation Voltage100 mV
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
RoHS Details
DescriptionBipolar Transistors - BJT NPN 80V Vceo 1.5A Ic MPT3
Package / CaseSC-62-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
CAHTS8541290000
JPHTS8541290100
Maximum Operating Temperature+ 150 C
BrandROHM Semiconductor
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SCR554P5T100
Product CategoryBipolar Transistors - BJT
Series2SxR
SubcategoryTransistors
Unit Weight0.005624 oz
ManufacturerROHM Semiconductor
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
Part # Aliases2SCR554P5
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)