参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current5.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time13 ns
Rds On - Drain-Source Resistance1.28 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time27 ns
Width6.2 mm
Height2.4 mm
Length6.6 mm
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge34 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
Fall Time19 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.139332 oz
ImageSTMicroelectronics STD6N62K3
SeriesSTD6N62K3
BrandSTMicroelectronics
Pd - Power Dissipation90 W
Factory Pack Quantity2500
Product TypeMOSFET
ManufacturerSTMicroelectronics
Product CategoryMOSFET
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage650 V
USHTS8541290095
TradenameMDmesh
Number of Channels1 Channel
Rise Time12.5 ns