参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min-
TechnologySi
Vgs th - Gate-Source Threshold Voltage3 V
Transistor PolarityN-Channel
Id - Continuous Drain Current40 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 25 V, + 25 V
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Typical Turn-On Delay Time27 ns
Rds On - Drain-Source Resistance65 mOhms
Transistor Type1 N-Channel
Maximum Operating Temperature+ 150 C
Typical Turn-Off Delay Time131 ns
ImageSTMicroelectronics STW48N60DM2
Package / CaseTO-247-3
PackagingTube
BrandSTMicroelectronics
SubcategoryMOSFETs
TARIC8541290000
Mounting StyleThrough Hole
Product CategoryMOSFET
DescriptionMOSFET PTD HIGH VOLTAGE
ManufacturerSTMicroelectronics
Factory Pack Quantity600
Qg - Gate Charge70 nC
MXHTS85412999
RoHS Details
SeriesSTW48N60DM2
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Fall Time9.8 ns
Unit Weight1.340411 oz
CNHTS8541290000
Pd - Power Dissipation300 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time27 ns