参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min35 S
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current60 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 15 V, + 15 V
JPHTS8541290100
Height2.4 mm
Length6.6 mm
CAHTS8541290000
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time30 ns
Product CategoryMOSFET
ImageSTMicroelectronics STD60NF55LT4
Rds On - Drain-Source Resistance14 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time80 ns
Maximum Operating Temperature+ 175 C
Package / CaseTO-252-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
DescriptionMOSFET N-Ch 55 Volt 60 Amp
Width6.2 mm
Mounting StyleSMD/SMT
TARIC8541210000
ManufacturerSTMicroelectronics
Product TypeMOSFET
BrandSTMicroelectronics
Qg - Gate Charge56 nC
Factory Pack Quantity2500
MXHTS85412101
RoHS Details
SubcategoryMOSFETs
SeriesSTD60NF55L
USHTS8541290095
Channel ModeEnhancement
Fall Time35 ns
Unit Weight0.139332 oz
CNHTS8541210000
Pd - Power Dissipation110 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage55 V
Number of Channels1 Channel
Rise Time180 ns
TypeMOSFET