参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min20 S
TechnologySi
Vgs th - Gate-Source Threshold Voltage1 V
Transistor PolarityN-Channel
Id - Continuous Drain Current60 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 15 V, + 15 V
JPHTS8541290100
Height9.15 mm
Length10.4 mm
CAHTS8541290000
Minimum Operating Temperature- 65 C
Typical Turn-On Delay Time35 ns
Product CategoryMOSFET
ImageSTMicroelectronics STP60NF06L
Rds On - Drain-Source Resistance14 mOhms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time55 ns
Maximum Operating Temperature+ 175 C
Package / CaseTO-220-3
PackagingTube
DescriptionMOSFET N-Ch 60 Volt 60 Amp
Width4.6 mm
Mounting StyleThrough Hole
TARIC8541210000
ManufacturerSTMicroelectronics
Product TypeMOSFET
BrandSTMicroelectronics
Qg - Gate Charge35 nC
Factory Pack Quantity1000
MXHTS85412101
RoHS Details
SeriesSTP60NF06L
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time30 ns
Unit Weight0.050717 oz
CNHTS8541210000
Pd - Power Dissipation110 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time220 ns
TypeMOSFET