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SI4559ADY-T1-GE3

SI4559ADY-T1-GE3

厂牌：VISHAY(威世)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051742536
描述：MOSFET N/P-CH 60V 5.3A 8-SOIC
最新价格近期成交46单+
数量价格（含税）
1¥9.2999
100¥8.0222
1250¥7.6445
2500¥7.3778
库存：1交期：3-5Days起订：1增量：1
数量：
X
9.2999（单价）
合计：
￥9.30
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current5.3 A, - 3.9 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Rds On - Drain-Source Resistance58 mOhms, 120 mOhms
RoHS Details
Package / CaseSO-8
Factory Pack Quantity2500
ImageVishay Semiconductors SI4559ADY-T1-GE3
PackagingCut Tape
PackagingReel
PackagingMouseReel
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
TARIC8541290000
BrandVishay Semiconductors
ManufacturerVishay
DescriptionMOSFET -60V Vds 20V Vgs SO-8 N&P PAIR
SubcategoryMOSFETs
Product CategoryMOSFET
Qg - Gate Charge20 nC, 22 nC
MXHTS85412999
SeriesSI4
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.017870 oz
CNHTS8541290000
Part # AliasesSI4559ADY-GE3
Pd - Power Dissipation3.1 W, 3.4 W
TradenameTrenchFET
Number of Channels2 Channel
Moisture Sensitivity Level1 (Unlimited)